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Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal

Type:
Journal
Info:
Annalen der Physik, Volume 529, Issue 11, 2017, Pages 1600410
Date:
2017-07-05
DOI:
http://dx.doi.org/10.1002/andp.201600410

Author Information

Name Institution
Mehrdad ShayganApplied Micro and Optoelectronic (AMO) GmbH
Martin OttoApplied Micro and Optoelectronic (AMO) GmbH
Abhay A. SagadeApplied Micro and Optoelectronic (AMO) GmbH
Carlos A. ChavarinUniversity Duisburg-Essen
Gerd BacherUniversity Duisburg-Essen
Wolfgang MertinUniversity Duisburg-Essen
Daniel NeumaierApplied Micro and Optoelectronic (AMO) GmbH

Films

Plasma AlTixOy

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Silicon

Notes

1094