About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures

Type:
Journal
Info:
Japanese Journal of Applied Physics 52, 035502 (2013)
Date:
2013-01-19
DOI:
http://dx.doi.org/10.7567/JJAP.52.035502

Author Information

Name Institution
Hagyoung ChoiHanyang University
Sanghun LeeHanyang University
Hyunsoo JungHanyang University
Seokyoon ShinHanyang University
Giyul HamHanyang University
Hyungtak SeoAjou University
Hyeongtag JeonHanyang University

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-200C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: Calcium Test
Diagnostic: Custom

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Binding
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

Si(100)
PES, Poly(Ether Sulfone)

Notes

573