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Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Type:
Journal
Info:
Thin Solid Films 617 (2016) 138 - 142
Date:
2016-02-24
DOI:
http://dx.doi.org/10.1016/j.tsf.2016.02.046

Author Information

Name Institution
Raffaella Lo NigroNational Research Council (CNR - Italy)
Emanuela SchiliròNational Research Council (CNR - Italy)
Giuseppe GrecoNational Research Council (CNR - Italy)
Patrick FiorenzaNational Research Council (CNR - Italy)
Fabrizio RoccaforteNational Research Council (CNR - Italy)

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

AlGaN

Notes

972