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Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma

Type:
Journal
Info:
Journal of Applied Physics 109, 084333 (2011)
Date:
2011-01-16
DOI:
http://dx.doi.org/10.1063/1.3555091

Author Information

Name Institution
Layton BakerUniversity of Colorado, Boulder
A. S. CavanaghUniversity of Colorado, Boulder
D. SegheteUniversity of Colorado, Boulder
Steven GeorgeUniversity of Colorado, Boulder
Adriaan J. M. MackusEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Z. Y. LiuGeneral Motors
F. T. WagnerGeneral Motors

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Pt

Hardware used: Custom
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bede D1

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bede D1

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5600 ESCA

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5600 ESCA

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Ultra 55

Substrates

Al2O3

Notes

691