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Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

Type:
Journal
Info:
REVIEW OF SCIENTIFIC INSTRUMENTS 85, 103510 (2014)
Date:
2014-10-09
DOI:
http://dx.doi.org/10.1063/1.4898802

Author Information

Name Institution
A. DechanaSongkhla Rajabhat University
P. ThamboonChiang Mai University
Dheerawan BoonyawanChiang Mai University

Films

Plasma Al2O3

Hardware used: Custom Microwave Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics S2000

Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

SiO2

Notes

Plasma characteristics and PEALD Al2O3 demonstration on custom microwave plasma ALD system.
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