About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems

Type:
Conference Proceedings
Info:
2016 SID Symposium Digest of Technical Papers 18-2
Date:
2016-05-25
DOI:
http://dx.doi.org/10.1002/sdtp.10638

Author Information

Name Institution
Yasmin AfsarPrinceton University
Jenny TangPrinceton University
Warren Rieutort-LouisPrinceton University
Liechao HuangPrinceton University
Yingzhe HuPrinceton University
Josue Sanz-RobinsonPrinceton University
Sigurd WagnerPrinceton University
Naveen VermaPrinceton University
James C. SturmPrinceton University

Films

Plasma ZnO

Hardware used: Custom
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
N2O, Nitrous Oxide
CAS#: 10024-97-2
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
CO2, Carbon Dioxide
CAS#: 124-38-9
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Notes

Plasma chemistry assumed from reference 7.
883