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Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films

Type:
Conference Proceedings
Info:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Date:
2016-06-05
DOI:
http://dx.doi.org/10.1109/PVSC.2016.7750195

Author Information

Name Institution
Hyunju LeeToyota Technological Institute
Takefumi KamiokaToyota Technological Institute
Dongyan ZhangToyota Technological Institute
Naotaka IwataToyota Technological Institute
Yoshio OhshitaToyota Technological Institute

Films

Plasma AlMgO

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Bis(ethylcyclopentadienyl)magnesium, (EtCp)2Mg
CAS#: 114460-02-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Surface Recombination Velocity
Analysis: -
Diagnostic: -

Characteristic: Efficiency
Analysis: -
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

939