About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition

Type:
Journal
Info:
physica status solidi (c) Volume 10, Issue 11, pages 1426--1429, 2013
Date:
2013-09-25
DOI:
http://dx.doi.org/10.1002/pssc.201300273

Author Information

Name Institution
Koji YoshitsuguNara Institute of Science and Technology
Masahiro HoritaNara Institute of Science and Technology
Yasuaki IshikawaNara Institute of Science and Technology
Yukiharu UraokaNara Institute of Science and Technology

Films

Plasma Al2O3

Hardware used: JSW-Afty AFTEX-600
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Band Gap
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

GaN

Notes

604