Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
Info:
Electrochemical and Solid-State Letters, 14 (1) H1-H4 (2011)
Author Information
Films
Film/Plasma Properties
Analysis: RBS, Rutherford Backscattering Spectrometry
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Analysis: Photoconductance
Analysis: SHG, Second Harmonic Generation
Analysis: C-V, Capacitance-Voltage Measurements
Analysis: C-V, Capacitance-Voltage Measurements
Analysis: RBS, Rutherford Backscattering Spectrometry
Substrates
Notes
| Paper available as chapter 5 in on-line thesis. |
| Paper says Oxford Instruments and ASM ALD tools. OpAL and EmerALD are guesses. |
| 686 |