About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation

Type:
Journal
Info:
Thin Solid Films 552 (2014) 155 - 158
Date:
2013-12-04

Author Information

Name Institution
Dong-Suk HanHanyang University
Duck-Kyun ChoiHanyang University
Jong-Wan ParkHanyang University

Films

Plasma Al2O3


Plasma TiO2


Film/Plasma Properties

Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: Water Vapor Transmission Rate (WVTR)

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Unknown
Analysis: Bending Test, Four Point Bend Delamination Test

Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: OLED Illumination

Substrates

PES, Poly(Ether Sulfone)

Notes

568