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Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 3, PP. 235-237, 2015
Date:
2015-01-07
DOI:
http://dx.doi.org/10.1109/LED.2015.2394455

Author Information

Name Institution
A. MalmrosChalmers University of Technology
P. GamarraIII-V Lab
M.-A. Di Forte-PoissonIII-V Lab
Jaan AarikChalmers University of Technology
C. LacamIII-V Lab
Jaan AarikChalmers University of Technology
M. TordjmanIII-V Lab
R. AubryIII-V Lab
N. RorsmanChalmers University of Technology

Films

Thermal Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Refractive Index
Analysis: -
Diagnostic: -

Substrates

Notes

468