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Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques

Type:
Journal
Info:
J. Phys. D: Appl. Phys. 50 024003
Date:
2016-10-20
DOI:
http://dx.doi.org/10.1088/1361-6463/50/2/024003

Author Information

Name Institution
Alberto PerrottaEindhoven University of Technology
Canek Fuentes-HernandezGeorgia Institute of Technology
Talha M. KhanGeorgia Institute of Technology
Bernard KippelenGeorgia Institute of Technology
Mariadriana CreatoreEindhoven University of Technology
Samuel GrahamGeorgia Institute of Technology

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 30-80C

Plasma TiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 30-80C

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Porosity
Analysis: Ellipsometric Porosimetry (EP)
Diagnostic: J.A. Woollam M-2000

Characteristic: Open Circuit Voltage
Analysis: Custom
Diagnostic: Custom

Characteristic: Short Circuit Current
Analysis: Custom
Diagnostic: Custom

Characteristic: Fill Factor
Analysis: Custom
Diagnostic: Custom

Characteristic: Power Conversion Efficiency
Analysis: Custom
Diagnostic: Custom

Substrates

TiO2
Al2O3
Si3N4
Ag
MoOx
P3HT, poly(3-hexylthiophene-2,5-diyl)
ICBA, indene-C 60 bisadduct
Silicon

Notes

1411