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Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing

Type:
Conference Proceedings
Info:
Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics SiliconPV 2012
Date:
2012-04-02
DOI:
http://dx.doi.org/10.1016/j.egypro.2012.07.088

Author Information

Name Institution
T. LüderUniversity of Konstanz
T. LauermannUniversity of Konstanz
A. ZuschlagUniversity of Konstanz
G. HahnUniversity of Konstanz
B. TerheidenUniversity of Konstanz

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 170-400C

Film/Plasma Properties

Characteristic: Substrate Temperature
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Passivation
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Images
Analysis: Optical Microscopy
Diagnostic: -

Characteristic: Blistering
Analysis: Optical Microscopy
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Blistering
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Substrates

Silicon

Notes

627