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Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing

Type:
Journal
Info:
ECS Transactions, 67 (1) 205-210 (2015)
Date:
2015-06-14
DOI:
http://dx.doi.org/10.1149/06701.0205ecst

Author Information

Name Institution
Koji YoshitsuguNara Institute of Science and Technology
Masahiro HoritaNara Institute of Science and Technology
Yasuaki IshikawaNara Institute of Science and Technology
Yukiharu UraokaNara Institute of Science and Technology

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Notes

500