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Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor

Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 61, issue 4, 345-351
Date:
2014-05-11
DOI:
http://dx.doi.org/10.1149/06104.0345ecst

Author Information

Name Institution
Kazunori KurishimaMeiji University

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Mobility
Analysis: -
Diagnostic: -

Substrates

Notes

PEALD Al2O3 for IGZO TFT gate dielectric.
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