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Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Thin Solid Films 619 (2016) 342-346
Date:
2016-10-20
DOI:
http://dx.doi.org/10.1016/j.tsf.2016.10.036

Author Information

Name Institution
M. HurKorea Institute of Machinery and Materials
J.Y. LeeKorea Institute of Machinery and Materials
W. S. KangKorea Institute of Machinery and Materials
J. O. LeeKorea Institute of Machinery and Materials
Y.-H. SongKorea Institute of Machinery and Materials
S. J. KimKorea Advanced Institute of Science and Technology
I. D. KimKorea Advanced Institute of Science and Technology

Films

Plasma Al2O3

Hardware used: Applied Materials P-5000 Mark II
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
He, Helium
CAS#: 7440-59-7
Deposition Temperature Range = 100-250C

Plasma Al2O3

Hardware used: Applied Materials P-5000 Mark II
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature Range = 100-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Acton Spectra-Pro 500i

Substrates

Silicon

Notes

977