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Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface

Type:
Journal
Info:
27th European Photovoltaic Solar Energy Conference and Exhibition
Date:
2012-09-24
DOI:
http://dx.doi.org/10.4229/27thEUPVSEC2012-2AV.6.23

Author Information

Name Institution
Wensheng LiangThe Australian National University
Klaus J. WeberThe Australian National University
Dongchul SuhThe Australian National University
Yongling RenThe Australian National University

Films

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 175C

Film/Plasma Properties

Characteristic: Surface Recombination Velocity
Analysis: Corona Charge
Diagnostic: Custom

Characteristic: Lifetime
Analysis: Lifetime Testing
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Si(100)

Notes

1369