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Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

Type:
Journal
Info:
Applied Physics Letters 97, 143502 (2010)
Date:
2010-09-02

Author Information

Name Institution
A. AliThe Pennsylvania State University
H. S. MadanThe Pennsylvania State University
A. P. KirkUniversity of Texas at Dallas
D. A. ZhaoThe Pennsylvania State University
Devin A. MoureyThe Pennsylvania State University
M. K. HudaitVirginia Tech
Robert M. WallaceUniversity of Texas at Dallas
Thomas N. JacksonThe Pennsylvania State University
Brian R. BennettU.S. Naval Research Laboratory
J. Brad BoosU.S. Naval Research Laboratory
Suman DattaThe Pennsylvania State University

Films

Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

GaSb

Notes

704