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Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films

Type:
Journal
Info:
Journal of The Electrochemical Society, 158(2) G21-G26 (2011)
Date:
2010-10-27
DOI:
http://dx.doi.org/10.1149/1.3517430

Author Information

Name Institution
K. B. JineshNXP Semiconductors Research
J. L. van HemmenEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Fred RoozeboomEindhoven University of Technology
J. H. KlootwijkEindhoven University of Technology
W. F. A. BeslingNXP Semiconductors Research
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Thermal Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4155C Semiconductor Parameter Analyzer

Characteristic: Barrier Height
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4155C Semiconductor Parameter Analyzer

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Substrates

Silicon

Notes

Films annealed in forming gas at 450C for 30 minutes prior to metal electrode deposition.
As deposited films compared to annealed films.
182