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Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 33, 04E102 (2015)
Date:
2015-04-03
DOI:
http://dx.doi.org/10.1116/1.4917548

Author Information

Name Institution
Laura B. RuppaltU.S. Naval Research Laboratory
Erin ClevelandU.S. Naval Research Laboratory
James G. ChamplainU.S. Naval Research Laboratory
Brian R. BennettU.S. Naval Research Laboratory
J. Brad BoosU.S. Naval Research Laboratory
Sharka M. ProkesU.S. Naval Research Laboratory

Films

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

GaSb

Notes

346