Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Type:

Journal

Info:

2015 Appl. Phys. Express 8 084101

Date:

2015-06-30

DOI:

http://dx.doi.org/10.7567/APEX.8.084101

Author Information

Name	Institution
Po-Chun Yeh	National Taiwan University
Yun-Wei Lin	National Dong Hwa University
Yue-Lin Huang	National Dong Hwa University
Jui-Hung Hung	National Taiwan University
Bo-Ren Lin	National Taiwan University
Lucas Yang	National Taiwan University
Cheng-Han Wu	National Taiwan University
Tzu-Kuan Wu	National Taiwan University
Chao-Hsin Wu	National Taiwan University
Lung-Han Peng	National Taiwan University

Hardware used: Unknown

CAS#: 75-24-1

CAS#: 7782-44-7

Deposition Temperature Range N/A

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