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Densification of Thin Aluminum Oxide Films by Thermal Treatments

Type:
Journal
Info:
Materials Sciences and Applications, 2014, 5, 628-638
Date:
2014-06-04
DOI:
http://dx.doi.org/10.4236/msa.2014.58065

Author Information

Name Institution
V. CimallaFraunhofer Institute for Applied Solid State Physics
M. BaeumlerFraunhofer Institute for Applied Solid State Physics
Lutz KirsteFraunhofer Institute for Applied Solid State Physics
M. PrescherFraunhofer Institute for Applied Solid State Physics
B. ChristianFraunhofer Institute for Applied Solid State Physics
T. PassowFraunhofer Institute for Applied Solid State Physics
Fouad BenkhelifaFraunhofer Institute for Applied Solid State Physics
Frank BernhardtFraunhofer Institute for Applied Solid State Physics
G. EichapfelIlmenau University of Technology
M. HimmerlichIlmenau University of Technology
S. KrischokIlmenau University of Technology
J. PezoldtIlmenau University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: J.A. Woollam VASE

Characteristic: Unknown
Analysis: FTIR Spectroscopic Ellipsometry
Diagnostic: SENTECH SE900 FTIR Ellipsometer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

4H n-SiC(0001)

Notes

AlOx samples annealed in N2 for 1 hour at 500 - 1025C.
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