About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

Type:
Journal
Info:
J. Vac. Sci. Technol. A 31, 01A106 (2013)
Date:
2012-10-04
DOI:
http://dx.doi.org/10.1116/1.4756906

Author Information

Name Institution
H. B. ProfijtEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma CoOx

Hardware used: Custom
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma TiO2

Hardware used: Custom
Pentamethyl cyclopentadienyl titanium trimethoxide Ti(CpMe5)(OMe)3
CAS#: 123927-75-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer
Diagnostic: Impedans Semion

Characteristic: Ion Flux
Analysis: RFEA, Retarding Field Energy Analyzer
Diagnostic: Impedans Semion

Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics UBS 4000-UV-VIS

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Film Stress
Analysis: Wafer Curvature
Diagnostic: KSA MOS Ultra-Scan

Substrates

Si(100)

Notes

O2 does not gas react with TMA, Star-Ti, or CoCp2
Bias impacts TiO2 phase. Low bias produces anatase while high bias produces rutile.
RTA in O2
62