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Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3

Type:
Journal
Info:
ECS Journal of Solid State Science and Technology, 8 (7) Q3001-Q3006 (2019)
Date:
2018-11-24
DOI:
http://dx.doi.org/10.1149/2.0021907jss

Author Information

Name Institution
Chaker FaresUniversity of Florida
Fan RenUniversity of Florida
David HaysUniversity of Florida
Brent P. GilaUniversity of Florida
S. J. PeartonUniversity of Florida

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma SiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Diagnostic: -

Substrates

AlGaO

Notes

Duplicate of 1220
1419