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Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface

Type:
Journal
Info:
Journal of Applied Physics 111, 093713 (2012)
Date:
2012-03-29
DOI:
http://dx.doi.org/10.1063/1.4709729

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
F. EinseleForschungszentrum Jülich
W. BeyerForschungszentrum Jülich
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Thermal Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 50-400C

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Substrates

Si(100)

Notes

Paper available as chapter 8 in on-line thesis.
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