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Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer

Type:
Journal
Info:
Nano Lett., 2017, 17 (10), pp 6287-6294
Date:
2017-09-05
DOI:
http://dx.doi.org/10.1021/acs.nanolett.7b02972

Author Information

Name Institution
Lachlan E. BlackEindhoven University of Technology
A. CavalliEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
J. E. M. HaverkortEindhoven University of Technology
E. P. A. M. BakkersEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma POx

Hardware used: Oxford Instruments FlexAL
Trimethyl phosphate, TMP, (MeO)3PO
CAS#: 512-56-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Characteristic: IQE, Internal Quantum Efficiency
Analysis: PL, PhotoLuminescence
Diagnostic: -

Substrates

InP
POx

Notes

1059