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Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Japanese Journal of Applied Physics 58, 110902 (oct)
Date:
2019-09-24
DOI:
http://dx.doi.org/10.7567/1347-4065/ab4754

Author Information

Name Institution
Masaki HirayamaTohoku University
Shigetoshi SugawaTohoku University

Films

Plasma Al2O3

Hardware used: Custom Direct Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Diagnostic: -

Characteristic: Electron Density, ne
Analysis: Planar Probe
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Substrates

Si(100)
SiO2

Notes

1549