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Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell

Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(4), Jul/Aug 2015
Date:
2015-05-14
DOI:
http://dx.doi.org/10.1116/1.4921726

Author Information

Name Institution
Florian TalkenbergLeibniz Institute of Photonic Technology
Stefan IllhardtLeibniz Institute of Photonic Technology
György Zoltán RadnócziInstitute of Technical Physics and Materials Science
Béla PéczInstitute of Technical Physics and Materials Science
Gabriele SchmidlLeibniz Institute of Photonic Technology
Alexander SchleusenerLeibniz Institute of Photonic Technology
Kadyrjan Dikhanbayeval-Farabi Kazakh National University
Gauhar Mussabekal-Farabi Kazakh National University
Alexander S. GudovskikhSt. Petersburg Academic University
Vladimir SivakovLeibniz Institute of Photonic Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 225C

Thermal Al:ZnO

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 225C

Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3011

Characteristic: Current Density
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Photo Emission Tech SS80

Characteristic: Open Circuit Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Photo Emission Tech SS80

Characteristic: Short Circuit Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Photo Emission Tech SS80

Characteristic: Fill Factor
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Photo Emission Tech SS80

Characteristic: Efficiency
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Photo Emission Tech SS80

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Photo Emission Tech SS80

Substrates

Si(100)
Al2O3

Notes

Oxford Instruments OpAL multifaceted study of plasma A2O3 passivation layer as well as predeposition plasma surface treatments on solar cell performance.
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