About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Advances in the fabrication of graphene transistors on flexible substrates

Type:
Journal
Info:
Beilstein J. Nanotechnol. 2017, 8, 467
Date:
2017-02-20

Author Information

Name Institution
Gabriele FisichellaCNR-IMM
Stella Lo VersoSTMicroelectronics
Silvestra Di MarcoSTMicroelectronics
Vincenzo VinciguerraSTMicroelectronics
Emanuela SchilirĂ²CNR-IMM
Salvatore Di FrancoCNR-IMM
Raffaella Lo NigroCNR-IMM
Fabrizio RoccaforteCNR-IMM
Amaia ZurutuzaGraphenea
Alba CentenoGraphenea
Sebastiano RavesiSTMicroelectronics
Filippo GiannazzoCNR-IMM

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Si(100)
Al
PEN, Polyethylene Napthalate

Notes

983