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Advances in the fabrication of graphene transistors on flexible substrates

Type:
Journal
Info:
Beilstein J. Nanotechnol. 2017, 8, 467
Date:
2017-02-20
DOI:
http://dx.doi.org/10.3762/bjnano.8.50

Author Information

Name Institution
Gabriele FisichellaCNR-IMM
Stella Lo VersoSTMicroelectronics
Silvestra Di MarcoSTMicroelectronics
Vincenzo VinciguerraSTMicroelectronics
Emanuela SchiliròCNR-IMM
Salvatore Di FrancoCNR-IMM
Raffaella Lo NigroCNR-IMM
Fabrizio RoccaforteCNR-IMM
Amaia ZurutuzaGraphenea
Alba CentenoGraphenea
Sebastiano RavesiSTMicroelectronics
Filippo GiannazzoCNR-IMM

Films

Plasma Al2O3

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-250C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Si(100)
Al
PEN, Polyethylene Napthalate

Notes

983