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Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers

Type:
Journal
Info:
J. Phys. D: Appl. Phys. 46 (2013) 084014
Date:
2013-02-01
DOI:
http://dx.doi.org/10.1088/0022-3727/46/8/084014

Author Information

Name Institution
Anuradha BulusuGeorgia Institute of Technology
Hyungchul (GaTech) KimGeorgia Institute of Technology
David SametGeorgia Institute of Technology
Samuel Graham Jr.Georgia Institute of Technology

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma ZnO

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma TiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco AFM

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Horiba Jobin Yvon LabRAM HR800 Raman Spectroscope

Substrates

Silicon

Notes

Substrates pirahna cleaned.
135