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MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion

Type:
Journal
Info:
Nanomaterials 2020, 10, 338
Date:
2020-02-13
DOI:
http://dx.doi.org/10.3390/nano10020338

Author Information

Name Institution
William ChiappimUniversidade de Aveiro, Campus Universitário de Santiago
Marcos WatanabeUniversity of Sao Paulo
Vanessa DiasInstituto Tecnológico de Aeronáutica (ITA-DCTA)
Giorgio E. TestoniInstituto Tecnológico de Aeronáutica (ITA-DCTA)
Ricardo RangelUniversity of Sao Paulo
Mariana A. FragaInstituto de Ciência e Tecnologia
Homero S. MacielInstituto Tecnológico de Aeronáutica (ITA-DCTA)
Sebastião dos Santos FilhoUniversity of Sao Paulo
Rodrigo S. PessoaInstituto Tecnológico de Aeronáutica (ITA-DCTA)

Films

Plasma TiO2

Hardware used: Beneq TFS-200
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Microstructure
Analysis: Raman Spectroscopy
Diagnostic: Horiba LabRam Evolution

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Tescan Mira

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Tescan Mira

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4146C

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4280A

Characteristic: Conductance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4280A

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4280A

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4280A

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4280A

Substrates

Si(100)

Notes

1452