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Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

Type:
Journal
Info:
Applied Physics Letters 101, 231601 (2012)
Date:
2012-11-08
DOI:
http://dx.doi.org/10.1063/1.4768693

Author Information

Name Institution
Laura B. RuppaltU.S. Naval Research Laboratory
Erin ClevelandU.S. Naval Research Laboratory
James G. ChamplainU.S. Naval Research Laboratory
Sharka M. ProkesU.S. Naval Research Laboratory
J. Brad BoosU.S. Naval Research Laboratory
Doewon ParkU.S. Naval Research Laboratory
Brian R. BennettU.S. Naval Research Laboratory

Films

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

GaSb

Notes

H2 plasma substrate treatment preceded PEALD Al2O3 deposition.
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