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Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer

Type:
Journal
Info:
Semiconductors, 2016, Vol. 50, No. 5, pp 632--638.
Date:
2015-09-08
DOI:
http://dx.doi.org/10.1134/S1063782616050195

Author Information

Name Institution
Vladimir P. PopovRussian Academy of Sciences
Mikhail A. IlnitskiiRussian Academy of Sciences
E. D. ZhanaevRussian Academy of Sciences
A. V. Myakon'kichRussian Academy of Sciences
Konstantin V. RudenkoRussian Academy of Sciences
Alexander V. GlukhovNovosibirsk Semiconductor Device Plant and Design Bureau

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-200C

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: -
Diagnostic: -

Substrates

Notes

618