About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Capacitance spectroscopy of gate-defined electronic lattices

Type:
Journal
Info:
Arxiv.org preprint
Date:
2017-09-26
DOI:
https://arxiv.org/abs/1709.09058v1

Author Information

Name Institution
T. HensgensDelft University of Technology
U. MukhopadhyayDelft University of Technology
P. BarthelemyDelft University of Technology
R. F. L. VermeulenDelft University of Technology
R. N. SchoutenDelft University of Technology
S. FallahiPurdue University
G. C. GardnerPurdue University
C. ReichlETH Zürich
W. WegscheiderETH Zürich
Michael J. ManfraPurdue University
L. M. K. VandersypenDelft University of Technology

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Adhesion
Analysis: -
Diagnostic: -

Characteristic: Hysteresis
Analysis: -
Diagnostic: -

Substrates

Notes

1057