About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers

Type:
Journal
Info:
Applied Surface Science 475 (2019) 926 - 933
Date:
2018-12-31

Author Information

Name Institution
Jin Hyuk JangPohang University of Science and Technology (POSTECH)
Nahae KimKangwon National University
Xinlin LiYeungnam University
Tae Kyu AnKorea National University of Transportation
Juyoung KimKangwon National University
Se Hyun KimYeungnam University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: Calcium Test

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: Optical Microscopy

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy

Characteristic: Refractive Index
Analysis: Ellipsometry

Substrates

Glass
PEN, Polyethylene Napthalate
PET, Polyethylene Terephthalate
Si(100)

Notes

1521