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Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition

Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 4, Issue 1-2, pages 10--12, 2010
Date:
2009-10-27
DOI:
http://dx.doi.org/10.1002/pssr.200903334

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
R. SeguinQ-CELLS SE
P. EngelhartQ-CELLS SE
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Thermal Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Passivation
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Diagnostic: Sinton WCT-100

Substrates

Si(100)

Notes

715