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Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers

Type:
Journal
Info:
Phys. Status Solidi RRL 2017, 1700235
Date:
2017-09-02
DOI:
http://dx.doi.org/10.1002/pssr.201700235

Author Information

Name Institution
Boris Veith-WolfInstitute for Solar Energy Research Hamelin (ISFH)
Jan SchmidtInstitute for Solar Energy Research Hamelin (ISFH)

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Minority Carrier Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Diagnostic: Sinton WCT-120 Lifetime Tester

Substrates

Silicon

Notes

1142