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Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

Type:
Journal
Info:
Applied Physics Letters 108, 182104 (2016)
Date:
2016-04-26
DOI:
http://dx.doi.org/10.1063/1.4948765

Author Information

Name Institution
Eungtaek KimKorea Advanced Institute of Science and Technology
Choong-Ki KimKorea Advanced Institute of Science and Technology
Myung Keun LeeKorea Advanced Institute of Science and Technology
Tewook BangKorea Advanced Institute of Science and Technology
Yang-Kyu ChoiKorea Advanced Institute of Science and Technology
Sang-Hee Ko ParkKorea Advanced Institute of Science and Technology
Kyung Cheol ChoiKorea Advanced Institute of Science and Technology

Films

Thermal Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Keithley 4200-SCS

Substrates

IGZO

Notes

868