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In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors

Type:
Journal
Info:
Applied Physics Letters 107, 081608 (2015)
Date:
2015-08-19
DOI:
http://dx.doi.org/10.1063/1.4929818

Author Information

Name Institution
Xiaoye QinUniversity of Texas at Dallas
Robert M. WallaceUniversity of Texas at Dallas

Films

Plasma Al2O3

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Thermal Al2O3

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: LEIS, Low Energy Ion Scattering
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

AlGaN

Notes

391