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Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing

Type:
Journal
Info:
Microelectronic Engineering 147 (2015) 239 - 243
Date:
2015-04-08
DOI:
http://dx.doi.org/10.1016/j.mee.2015.04.059

Author Information

Name Institution
Seung Chan HeoHanyang University
Donghwan LimHanyang University
Woo Suk JungHanyang University
Rino ChoiInha University
Hyun-Yong YuKorea University
Changhwan ChoiHanyang University

Films

Plasma Al2O3

Hardware used: Unknown
H2, Hydrogen
CAS#: 1333-74-0
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: MS-TEC Probe Station

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: MS-TEC Probe Station

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: MS-TEC Probe Station

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: MS-TEC Probe Station

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Smartlab

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Substrates

4H n-SiC(0001)

Notes

522