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Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

Type:
Journal
Info:
Infrared Physics & Technology 87 (2017) 129-133
Date:
2017-10-22
DOI:
https://doi.org/10.1016/j.infrared.2017.10.006

Author Information

Name Institution
Alexander VoitsekhovskiiNational Research Tomsk State University
Sergey NesmelovNational Research Tomsk State University
Stanislav DzyadukhNational Research Tomsk State University
V.S. VaravinRussian Academy of Sciences
S.A. DvoretskiiNational Research Tomsk State University
N.N. MikhailovRussian Academy of Sciences
M.V. YakushevRussian Academy of Sciences
G.Yu. SidorovRussian Academy of Sciences

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

HgCdTe

Notes

1077