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Oxide semiconductor thin film transistors on thin solution-cast flexible substrates

Type:
Journal
Info:
IEEE Electron Device Letters (Volume: 36, Issue: 1)
Date:
2014-12-22
DOI:
http://dx.doi.org/10.1109/LED.2014.2371011

Author Information

Name Institution
H. U. LiThe Pennsylvania State University

Films

Plasma ZnO

Hardware used: Custom
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
N2O, Nitrous Oxide
CAS#: 10024-97-2
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
CO2, Carbon Dioxide
CAS#: 124-38-9
Deposition Temperature = 200C

Thermal Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Polyimide

Notes

PEALD Al2O3 and ZnO for flexible electronics.
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