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Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density

Type:
Journal
Info:
Japanese Journal of Applied Physics 55, 1202B5 (2016)
Date:
2016-08-07
DOI:
http://doi.org/10.7567/JJAP.55.1202B5

Author Information

Name Institution
Takafumi KamimuraNational Institute of Information and Communications Technology
Daivasigamani KrishnamurthyNational Institute of Information and Communications Technology
A. KuramataTamura Corporation
S. YamakoshiTamura Corporation
M. HigashiwakiNational Institute of Information and Communications Technology

Films

Plasma Al2O3

Hardware used: Aixtron Genus Stratagem 200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-300C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Ga2O3

Notes

893