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Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source

Type:
Conference Proceedings
Info:
Physics Procedia 18 (2011) 100–106
Date:
2011-08-07
DOI:
https://doi.org/10.1016/j.phpro.2011.06.066

Author Information

Name Institution
Xingcun LiBeijing Institute of Graphic Communication
Qiang ChenBeijing Institute of Graphic Communication
Lijun SangBeijing Institute of Graphic Communication
Lizhen YangBeijing Institute of Graphic Communication
Zhongwei LiuBeijing Institute of Graphic Communication
Zhengduo WangBeijing Institute of Graphic Communication

Films

Plasma Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: Dektak

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Diagnostic: Hiden Langmuir Probe

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Diagnostic: Hiden Langmuir Probe

Characteristic: Ion Density
Analysis: Langmuir Probe
Diagnostic: Hiden Langmuir Probe

Substrates

Si(100)

Notes

1440