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Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces

Type:
Journal
Info:
Applied Surface Science 593 (2022) 153336
Date:
2022-04-05
DOI:
https://doi.org/10.1016/j.apsusc.2022.153336

Author Information

Name Institution
Zhongwei LiuLund University
Sofie YngmanLund University
Andrea TroianLund University
Giulio D'AcuntoLund University
Adam JönssonLund University
Johannes SvenssonLund University
Anders MikkelsenLund University
Lars-Erik WernerssonLund University
Rainer TimmLund University

Films

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 200-250C

Plasma Substrate Pretreatment

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
H2, Hydrogen
CAS#: 1333-74-0
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature Range = 200-250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Synchrotron

Substrates

GaSb

Notes

1703