About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces

Type:
Journal
Info:
Applied Surface Science 593 (2022) 153336
Date:
2022-04-05

Author Information

Name Institution
Zhongwei LiuLund University
Sofie YngmanLund University
Andrea TroianLund University
Giulio D'AcuntoLund University
Adam JönssonLund University
Johannes SvenssonLund University
Anders MikkelsenLund University
Lars-Erik WernerssonLund University
Rainer TimmLund University

Films

Thermal Al2O3



CAS#: 1333-74-0

CAS#: 7440-37-1

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

GaSb

Notes

1703