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Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells

Type:
Conference Proceedings
Info:
25th European PV Solar Energy Conference and Exhibition,6-10 September 2010, Valencia, Spain
Date:
2010-09-06
DOI:
http://dx.doi.org/10.4229/25thEUPVSEC2010-2DO.2.4

Author Information

Name Institution
Armin RichterFraunhofer Institute for Solar Energy Systems (ISE)
H. HenneckFraunhofer Institute for Solar Energy Systems (ISE)
J. BenickFraunhofer Institute for Solar Energy Systems (ISE)
M. HörteisFraunhofer Institute for Solar Energy Systems (ISE)
M. HermleFraunhofer Institute for Solar Energy Systems (ISE)
S. W. GlunzFraunhofer Institute for Solar Energy Systems (ISE)

Films

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Minority Carrier Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Diagnostic: WCT120

Characteristic: Emitter Saturation Current Density
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker IR Spectrometer

Substrates

Si(100)

Notes

56