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Hafnia and alumina on sulphur passivated germanium

Type:
Journal
Info:
Vacuum, Volume 122, Part B, 2015, Pages 306 - 309
Date:
2015-03-18
DOI:
http://dx.doi.org/10.1016/j.vacuum.2015.03.017

Author Information

Name Institution
M. AlthobaitiUniversity of Liverpool
S. MatherUniversity of Liverpool
Naser SedghiUniversity of Liverpool
Vinod R. DhanakUniversity of Liverpool
Ivona Z. MitrovicUniversity of Liverpool
Steve HallUniversity of Liverpool
Paul R. ChalkerUniversity of Liverpool

Films

Plasma HfO2

Hardware used: Oxford Instruments OpAL
(CpMe)2HfOMeMe
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal HfO2

Hardware used: Oxford Instruments OpAL
(CpMe)2HfOMeMe
CAS#: 0-0-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Ge

Notes

478