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An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD

Type:
Journal
Info:
Chem. Vap. Deposition 2008, 14, 296–302
Date:
2008-10-06
DOI:
http://dx.doi.org/10.1002/cvde.200806701

Author Information

Name Institution
Michael T. SemanCMD Research LLC
David N. RichardsColorado School of Mines
Pieter RowletteColorado School of Mines
Colin A. WoldenColorado School of Mines

Films

Plasma Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 165C

Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7000F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7000F

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Nicolet Nexus 870

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Boonton 76A Capacitance Voltage Meter

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Tektronix 576 Current Tracer

Substrates

Silicon
ITO

Notes

Si wafers had HF-dip.
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