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Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen

Type:
Journal
Info:
Applied Physics Letters 102, 132904 (2013)
Date:
2013-03-26
DOI:
http://dx.doi.org/10.1063/1.4801471

Author Information

Name Institution
Yukio FukudaTokyo University of Science
Hiroki IshizakiTokyo University of Science
Yohei OtaniTokyo University of Science
Chiaya YamamotoUniversity of Yamanashi
Junji YamanakaUniversity of Yamanashi
Tetsuya SatoUniversity of Yamanashi
Toshiyuki TakamatsuSST Inc.
Hiroshi OkamotoHirosaki University
Hidehumi NaritaHirosaki University

Films

Plasma Al2O3

Hardware used: Custom Microwave Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Thermal Al2O3

Hardware used: Custom Microwave Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Interface Trap Density
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Agilent 4284A LCR Meter

Substrates

Ge

Notes

579