About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Band alignment of Al2O3 with (-201) β-Ga2O3

Type:
Journal
Info:
Vacuum, Volume 142, 2017, Pages 52 - 57
Date:
2017-05-07
DOI:
http://dx.doi.org/10.1016/j.vacuum.2017.05.006

Author Information

Name Institution
Patrick H. Carey IVUniversity of Florida
Fan RenUniversity of Florida
David HaysUniversity of Florida
Brent P. GilaUniversity of Florida
S. J. PeartonUniversity of Florida
Soohwan JangDankook University
A. KuramataTamura Corporation

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5100 ESCA

Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Diagnostic: -

Substrates

Ga2O3

Notes

Compares PEALD with sputtered film.
985